@article{oai:kanazawa-u.repo.nii.ac.jp:00058452,
 author = {川江, 健 and 森本, 章治 and Nomura, Keisuke and Kondo, Yuki and Kawae, Takeshi and Morimoto, Akiharu},
 issue = {5},
 journal = {ECS Solid State Letters},
 month = {},
 note = {We investigated the effects of a SrRuO3 (SRO) layer on the retention properties of (Bi, Pr)(Fe, Mn)O3 (BPFM) film capacitors under high temperature conditions. The dielectric constant of the BPFM film capacitor was increased by the introduction of the SRO layer. In addition, the Pt/BPFM/SRO/Pt capacitor showed polarization losses of only 6.4% in both polarization directions after a retention time of 104 s at 400°C, resulting in symmetrical switching behavior. These results imply that the introduction of the SRO layer is effective in suppression of the formation of an interfacial layer between BPFM and Pt. © 2015 The Electrochemical Society., 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系},
 pages = {N1--N4},
 title = {Effects of SrRuO3 layer on retention properties of (Bi, Pr)(Fe, Mn)O3 film capacitor at high temperature},
 volume = {4},
 year = {2015}
}