@article{oai:kanazawa-u.repo.nii.ac.jp:00059033,
 author = {斎藤, 峯雄 and Zaharo, Aflah and Purqon, Acep and Winata, Toto and Saito, Mineo},
 issue = {7},
 journal = {Japanese Journal of Applied Physics},
 month = {Jun},
 note = {We carry out first-principle calculations on monolayer group IV-VI 2D materials. We study systems consisting of group IV (C, Si, Ge) and group VI elements (O, S, Se, Te) and find that all the materials form buckled puckered geometries. We clarify that VI atoms tend to be located at the lower positions in the buckled structure when the electronegativity of the VI atom is sufficiently larger than that of the IV atom, which is due to the electron transfer from the IV atom to the VI atom. All the calculated bands are doubly degenerated on the first Brillouin zone edge and this degeneracy can be explained based on the group theory. © 2020 The Japan Society of Applied Physics., Creative Commons Attribution 4.0 license.  Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI., 金沢大学ナノマテリアル研究所 / 金沢大学理工研究域数物科学系},
 title = {Electronic structure of puckered group IV-VI two-dimensional monolayer materials},
 volume = {59},
 year = {2020}
}