{"created":"2023-07-27T06:59:27.093115+00:00","id":59036,"links":{},"metadata":{"_buckets":{"deposit":"ec535adb-fa16-44f7-bd12-6fc37a9f0261"},"_deposit":{"created_by":18,"id":"59036","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"59036"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00059036","sets":["4162:4169:4188"]},"author_link":["104081","49803","79748","2956","104080"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-06-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageStart":"071001","bibliographicVolumeNumber":"59","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics"}]}]},"item_4_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"斎藤, 峯雄"}],"nameIdentifiers":[{},{}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We study spin-polarized cation vacancies in wurtzite structure semiconductors (BeO, ZnO, ZnS, CdS, BN, AlN, GaN and GaP) by using first-principles calculations based on the density functional theory. We find that C3v geometries are the most stable and are spin-polarized. Two majority spin electrons occupying the defect E level lead to the magnetic moment of 2 μ B in the case of II-VI semiconductors. On the contrary, in the case of III-V semiconductors, three majority spin electrons occupying the defect E and A1 levels induce the magnetic moment of 3 μ B . The spin polarization of cation vacancies in oxides and nitrides are found to be stable compared with other cation vacancies in II-VI and III-V semiconductors, respectively. We clarify that the effect of the symmetry lowering from C3v to C s is small and thus confirm that the spin polarized C3v geometries are the most stable. © 2020 The Japan Society of Applied Physics.","subitem_description_type":"Abstract"}]},"item_4_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Embargo Period 12 months","subitem_description_type":"Other"}]},"item_4_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学ナノマテリアル研究所 / 金沢大学理工研究域数物科学系","subitem_description_type":"Other"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00065298","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Japan Society of Applied Physics / IOP Publishing"}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.35848/1347-4065/ab9654","subitem_relation_type_select":"DOI"}}]},"item_4_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://iopscience.iop.org/1347-4065/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://iopscience.iop.org/1347-4065/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"http://www.jsap.or.jp/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.jsap.or.jp/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://iopscience.iop.org/article/10.35848/1347-4065/ab9654"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://iopscience.iop.org/article/10.35848/1347-4065/ab9654","subitem_relation_type_select":"URI"}}]},"item_4_rights_23":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright © 2020 Japan Society of Applied Physics / IOP Publishing"}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA12295836","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"1347-4065","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Widianto, Muhammad Yusuf Hakim"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kadarisman, Hana Pratiwi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yatmeidhy, Amran Mahfudh"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Saito, Mineo"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-02-25"}],"displaytype":"detail","filename":"SC-PR-SAITO-M-071001.pdf","filesize":[{"value":"445.4 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"SC-PR-SAITO-M-071001.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/59036/files/SC-PR-SAITO-M-071001.pdf"},"version_id":"4225093c-3385-444e-b467-b05aebb7744c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Spin-polarized cation monovacancies in wurtzite structure semiconductors: first-principles study","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Spin-polarized cation monovacancies in wurtzite structure semiconductors: first-principles study"}]},"item_type_id":"4","owner":"18","path":["4188"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-02-25"},"publish_date":"2022-02-25","publish_status":"0","recid":"59036","relation_version_is_last":true,"title":["Spin-polarized cation monovacancies in wurtzite structure semiconductors: first-principles study"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T09:51:36.314973+00:00"}