{"created":"2023-07-27T06:59:58.913641+00:00","id":59748,"links":{},"metadata":{"_buckets":{"deposit":"50f06856-e89f-4f22-88ae-ddb51fb8554b"},"_deposit":{"created_by":18,"id":"59748","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"59748"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00059748","sets":["2812:2813:2835"]},"author_link":["11298"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-12-07","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"2p.","bibliographicVolumeNumber":"1997 – 1998","bibliographic_titles":[{"bibliographic_title":"平成10(1998)年度 科学研究費補助金 基盤研究(C) 研究成果報告書概要"},{"bibliographic_title":"1998 Fiscal Year Final Research Report Summary","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hata, Tomonobu"}],"nameIdentifiers":[{"nameIdentifier":"11298","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"50019767","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=50019767"},{"nameIdentifier":"50019767","nameIdentifierScheme":"研究者番号","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000050019767"}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"同位体酸素(^<18>O_2)ガスを用いてPZT(Pb(Zr,Ti)O_3)薄膜を作製し,膜に含まれる酸素の質量をSIMSを用いて測定ることにより膜中酸素の起源を調べた.金属モードでPZT薄膜を作製すると,膜中酸素のうち90%はPbOからきた酸素であり,残り10%が流した酸素ガスからきたものであることが判明した.従って,この場合PbOが主要な酸素源ということになる.一方酸化物モードの場,合PbOから供給される酸素は30%であり,流した酸素ガスが主要な酸素源であることをはじめて明らかにした.\nつぎに、PbのZr+Tiに対する比率の定量的検討を行ったところその比率が3以上のときペロブスカイト構造になりやすいことが判明した。この結果は、ちょうどPZTの化学量論比を満足するようにPbOから酸素が供給されたときペロブスカイト構造が生じたと理解される。Pbの蒸気圧が高く、単にそれを補うために過剰なPbOが必要なのではない。これは新しい着眼点であるといえる。\n最後に本研究では、得られた結果を基に、準金属モードスパッタ堆積におけるターゲットの設計指針を与えいる。","subitem_description_type":"Abstract"},{"subitem_description":"Origin of oxygens in PZT (Pb(Zr, Ti)O_3) films prepared using isotope oxygen (18O_2) was investigated by analyzing the mass of oxygens in the films by SIMS technique. For a film prepared by metallic mode it was found for the first time that 90% oxygen in the film was from PbO and the rest 10% from oxygen gas. Thus PbO is the main oxygen source. While, for oxide mode 30% oxygen came from PbO, consequently, oxygen gas was the main oxygen source.\nQuantitatively investigating Pb ratio to Zr+Ti in targets, it was found that perovskite films were intended to grow when the ratio was more than 3. This result is recognized that perovskite films grew when oxygen was supplied so as to just satisfy the stoichiometry of PZT.PbO is not necessary to just supplement its deficiency due to high volatility of Pb. This is a novel view point.\nFinally based on results a design method for target of quasi-metallic mode sputter deposition is proposed.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:09650349, 研究期間(年度):1997 – 1998","subitem_description_type":"Other"},{"subitem_description":"出典：研究課題「新しいスパッタ堆積モードによる強誘電体(PZT)薄膜の低温形成とその機構解明 」課題番号09650349\n（KAKEN：科学研究費助成事業データベース（国立情報学研究所）） \n（https://kaken.nii.ac.jp/ja/report/KAKENHI-PROJECT-09650349/096503491998kenkyu_seika_hokoku_gaiyo/）を加工して作成","subitem_description_type":"Other"}]},"item_9_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学工学部","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00066003","subitem_identifier_reg_type":"JaLC"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=50019767"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=50019767","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650349/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650349/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/ja/report/KAKENHI-PROJECT-09650349/096503491998kenkyu_seika_hokoku_gaiyo/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/ja/report/KAKENHI-PROJECT-09650349/096503491998kenkyu_seika_hokoku_gaiyo/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"畑, 朋延"}],"nameIdentifiers":[{"nameIdentifier":"11298","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"50019767","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=50019767"},{"nameIdentifier":"50019767","nameIdentifierScheme":"研究者番号","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000050019767"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-05-13"}],"displaytype":"detail","filename":"TE-PR-HATA-T-kaken 1999-2p.pdf","filesize":[{"value":"102.5 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-HATA-T-kaken 1999-2p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/59748/files/TE-PR-HATA-T-kaken 1999-2p.pdf"},"version_id":"78ff48ed-2c58-4055-8e38-ecd7493cd0d7"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"新しいスパッタ堆積モードによる強誘電体(PZT)薄膜の低温形成とその機構解明","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"新しいスパッタ堆積モードによる強誘電体(PZT)薄膜の低温形成とその機構解明"},{"subitem_title":"Low Temperature Preparation of Ferroelectric (PZT) Thin Films by New Sputter Deposition Mode and Investigation of Its Mechanisms","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["2835"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-05-13"},"publish_date":"2022-05-13","publish_status":"0","recid":"59748","relation_version_is_last":true,"title":["新しいスパッタ堆積モードによる強誘電体(PZT)薄膜の低温形成とその機構解明"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2024-07-01T06:35:49.005604+00:00"}