{"created":"2023-07-27T07:00:50.881136+00:00","id":60927,"links":{},"metadata":{"_buckets":{"deposit":"2daf43ce-da5b-4020-87e4-c0ec0065e7a7"},"_deposit":{"created_by":18,"id":"60927","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"60927"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00060927","sets":["2812:2813:2842"]},"author_link":["11298"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1993-03-15","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"2p.","bibliographicVolumeNumber":"1989 – 1991","bibliographic_titles":[{"bibliographic_title":"平成3(1991)年度 科学研究費補助金 一般研究(B) 研究成果報告書概要"},{"bibliographic_title":"1991 Fiscal Year Final Research Report Summary","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"われわれの開発したLiNbO_3を用いた透明トランスジュ-サ法PASは非常に感度が良いという特徴はある。しかし、LiNbO_3には圧電性と焦電性があるので、物理定数の定量的評価をするためには、その効果を分離する必要がある。そこでZー,128°回転Yー、Yーcut板の3種類のトランスジュ-サを用いて実験を行った。その結果、zーcut板では焦電効果が信号の発生に寄与していること、また理論解析ではトランスジュ-サと試料の間に熱抵抗を考慮する必要のあることを明らかにした。これらの結果だけでは、Yーcut板の信号は圧電効果によるものであると断言出来ないが、理論計算にしたがって焦電効果が無視できれば、ヤング率、熱膨張係数等の弾性的性質にはyーcut板で、また熱伝導率、熱拡散係数等の熱的性質にはZーcut板でそれぞれ分離して評価ができる。このように、このように物性評価に適したトランスジュ-サを選べば、より高感度で正確な評価がきたいできる。\n次にzーcut板に対して空気層の影響を除去できる測定方法がないか検討した。トランスジュ-サに吸収が無い場合には、励起光をトランスジュ-サを通した表面からと試料裏面に直接照射し、両者の振幅信号の比または位相信号の差を求めると空気層の影響を除去できることを理論的に明らかにし実験値と比較した。この方法でSiウエハ-に対する熱拡散率を推定し文献値と同程度の値となった。","subitem_description_type":"Abstract"},{"subitem_description":"We developed a PAS (Photoacoustic Spectroscopy) using a transparent transducer. It is possible to evaluate an absorption coefficient of semiconductors quantitatively and to perform a reproducible experiment. As the light can irradiate through a transparent transducer, a generated acoustic slignal is directly detected by this transducer. Consequently, the sensitivity is considerably improved and there are no sample geometry limitations. Especially, this method is effective to evaluate the surface layer of the samples, ion implanted layers, interface of heteroepitaxial layers, and so on.\n1. It is so sensitive that it is possible to detect the signals from the ion implanted layer. As this layer is so thin (900-3200, *) that this method is also applicable to evaluate the surface damages of semiconductors.\n2. At low energy region we could detect a weak absorption which is generated by the localized states of ion implanted layer. By estimating this value, it is possible to evaluate the recovery process of the thin ion implanted layer by thermal annealing, quantitatively.\nNext, PA signals from GaInP/GaAs heterostructure and multilayer structures of semiconductors were observed and the following results were obtained.\n3. Each absorption edge of multilayer structure is determined separately by the PA dips and large phase shift.\n4. Nonradiative defects are detected clearly at GaInP/GaAs interface.\n5. The PA dip occurs at interfacial layer when the signal origin moves from one to another layer as irradiated wavelength changes. This is because the transducer detects two different phase signals with different amplitudes of each layer at the same time.\n6. Now we are trying to separate the signals from piezoelectric and piroelectric effects and to make it possible to evaluate the optical and thermal constants quantitatively by comparing with the theoretical analysis.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:01460074, 研究期間(年度):1989 – 1991","subitem_description_type":"Other"},{"subitem_description":"出典：研究課題「超高感度新型PASによる積層構造界面の新しい評価法」課題番号01460074\n（KAKEN：科学研究費助成事業データベース（国立情報学研究所）） \n（https://kaken.nii.ac.jp/ja/report/KAKENHI-PROJECT-01460074/014600741991kenkyu_seika_hokoku_gaiyo/）を加工して作成","subitem_description_type":"Other"}]},"item_9_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学工学部","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00067171","subitem_identifier_reg_type":"JaLC"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=50019767"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=50019767","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/ja/grant/KAKENHI-PROJECT-01460074/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/ja/grant/KAKENHI-PROJECT-01460074/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/ja/report/KAKENHI-PROJECT-01460074/014600741991kenkyu_seika_hokoku_gaiyo/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/ja/report/KAKENHI-PROJECT-01460074/014600741991kenkyu_seika_hokoku_gaiyo/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-10-20"}],"displaytype":"detail","filename":"TE-PR-HATA-T-kaken 1993-2p.pdf","filesize":[{"value":"103.1 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-HATA-T-kaken 1993-2p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/60927/files/TE-PR-HATA-T-kaken 1993-2p.pdf"},"version_id":"08e37f02-db82-489b-9884-75aacdb5d927"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"超高感度新型PASによる積層構造界面の新しい評価法","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"超高感度新型PASによる積層構造界面の新しい評価法"},{"subitem_title":"Evaluation of Multilayer Structure by Using new High Sensitivity PAS","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["2842"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-10-20"},"publish_date":"2022-10-20","publish_status":"0","recid":"60927","relation_version_is_last":true,"title":["超高感度新型PASによる積層構造界面の新しい評価法"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T12:09:14.125283+00:00"}