@article{oai:kanazawa-u.repo.nii.ac.jp:00007396,
 author = {Tronciu, V.Z. and Yamada, Minoru and Ohno, Tomomi and Ito, Shigetoshi and Kawakami, Toshiyuki and Taneya, Mototaka},
 issue = {12},
 journal = {IEEE JOURNAL OF QUANTUM ELECTRONICS},
 month = {Dec},
 note = {AA00667423, Room-temperature operation of self-pulsating InGaN lasers was obtained at a wavelength of 395 nm. The laser structure consists of a multiquantum-well InGaN active layer and a p-type InGaN single-quantum-well saturable absorber. The frequency range of the self-pulsation was from 1.6 to 2.9 GHz. The experimental results were well explained with our theoretical analysis. We found that features of the saturable absorber strongly affect the self-pulsation. Influence of device and material parameters on the laser dynamics was also investigated.},
 pages = {1509--1514},
 title = {Self-pulsation in an InGaN laser - theory and experiment -},
 volume = {39},
 year = {2003}
}