@article{oai:kanazawa-u.repo.nii.ac.jp:00007495,
 author = {Hirose, Hajime and Suzuki, Shinya and Goto, Masahide and Sasaki, Toshihiko},
 journal = {Materials Science Forum},
 month = {Jan},
 note = {In depositing the TiN thin films to the substrate by Physical Vapor Deposition (PVD), it influences the substrate interface. Change of the residual stress and the full-width at half maximum (FWHM) in each process of the TiN deposition of thin film was measured by the X-ray stress measurement. As a result of the X-ray stress measurement, there are no changes in the residual stress and the FWHM. It is thought that there is a difference in the penetration depth to the substrate of X-rays and Ti ion., 金沢大学大学院自然科学研究科システム創成科学専攻},
 pages = {601--606},
 title = {Influence of interfacial neighborhood on residual stress due to deposition of TiN thin films made by PVD},
 volume = {490-491},
 year = {2005}
}