@article{oai:kanazawa-u.repo.nii.ac.jp:00007651,
 author = {飯山, 宏一 and Iiyama, Koichi and Kita, Yukihiro and Ohta, Yosuke and Nasuno, Masaaki and Takamiya, Saburo and Higashimine, Koichi and Ohtsuka, Nobuo},
 issue = {11},
 journal = {IEEE Transactions on Electron Devices},
 month = {Nov},
 note = {A gate insulating layer with single nm-order thickness for suppressing gate leakage current is one of the key factors in extending downsizing limits, based upon the scaling rule, of field-effect-type transistors. We describe the fabrication and characterization of GaAs MISFETs with a nm-thin oxidized layer as the gate insulating layer, which is formed by an ultraviolet (UV) and ozone process. The UV and ozone process forms oxidized GaAs layers near the surface, which effectively suppress the reverse leakage current by several orders of magnitude. The fabricated GaAs MISFET can operate not only in the depletion mode, but also in the accumulation mode up to 3 V gate voltage for 8-nm-thick oxidized layers due to the current blocking effect of the oxidized layer. A current cutoff frequency of 6 GHz and a maximum oscillation frequency of 8 GHz are obtained for a GaAs MISFET with 1-/spl mu/m gate length and 8-nm-thick oxidized layers., 金沢大学工学部},
 pages = {1856--1862},
 title = {Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process},
 volume = {49},
 year = {2002}
}