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Correlation between the results of charge deep-level transient spectroscopy and ESR techniques for undoped hydrogenated amorphous silicon
http://hdl.handle.net/2297/3508
http://hdl.handle.net/2297/3508d3549843-416c-430e-a5b3-86c2a0f71cf7
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-KUMEDA-M-195211.pdf (133.3 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2017-10-03 | |||||
| タイトル | ||||||
| タイトル | Correlation between the results of charge deep-level transient spectroscopy and ESR techniques for undoped hydrogenated amorphous silicon | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Nádaždy, V.
× Nádaždy, V.× Durń, R.× Thurzo, I.× Pinčík, E.× Nishida, A.× Shimizu, J.× Kumeda, Minoru× Shimizu, Tatsuo |
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| 提供者所属 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 金沢大学大学院自然科学研究科電子物性デバイス | |||||
| 提供者所属 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 金沢大学工学部 | |||||
| 書誌情報 |
Physical Review B - Condensed Matter and Materials Physics 巻 66, 号 19, p. 195211-1-195211-8, 発行日 2002-11-01 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1098-0121 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1103/physrevb.66.195211 | |||||
| その他の識別子 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 195211 | |||||
| 出版者 | ||||||
| 出版者 | American Physical Society | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Results of charge deep-level transient spectroscopy (DLTS) and electron spin resonance (ESR) measurements on undoped hydrogenated amorphous silicon (a-Si:H) clearly demonstrate that a group of gap states with a mean energy of 0.82 eV as observed in charge DLTS experiments for a-Si:H based metal/oxide/semiconductor structure is the same as the g=2.0055 ESR defect (the Dz component). This correlation provides a distinct marker for charge DLTS technique. We obtained a very good fit to spectra obtained on undoped a-Si:H in the annealed state whilst there is some discrepancy between the experimental and simulated spectra for the light-soaked state. The first quantitative comparison of defect pool model with gap states directly observed by charge DLTS offers not only additional data for more accurate identification of all the intrinsic and light-induced defects. This also renders distinct counter-evidence to recently published conjectures about the creation of another charged defect during early stage of Staebler-Wronski effect. By contrast, our presented results clearly argue for opposite process, i.e., decay of positively charged defect states Dh. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
