@article{oai:kanazawa-u.repo.nii.ac.jp:00007698,
 author = {森本, 章治 and 久米田, 稔 and 清水, 立生 and Morimoto, Akiharu and Takizawa, Hidetoshi and Yonezawa, Yasuto and Kumeda, Minoru and Shimizu, Tatsuo},
 issue = {PART1},
 journal = {Journal of Non-Crystalline Solids},
 month = {May},
 note = {Silicon oxide films were prepared at room temperature by pulsed laser ablation using an ArF or KrF excimer laser in a gas mixture of He and O2. The effect of an ArF excimer laser irradiation on the deposited film was investigated. As-deposited transparent films containing Si crystallites with sizes greater than 10 nm show photoluminescence. However, after laser irradiation with 1000 shots, the photoluminescence (PL) intensity was increased by two orders of magnitude. The PL spectrum is centered around 570 nm (2.2 eV). The origin of the large PL enhancement is discussed, 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報学系 / 金沢大学工学部},
 pages = {493--497},
 title = {Photoluminescence enhancement by excimer laser irradiation in silicon oxide films prepared by pulsed laser ablation},
 volume = {227-230},
 year = {1998}
}