{"created":"2023-07-27T06:24:42.517125+00:00","id":7725,"links":{},"metadata":{"_buckets":{"deposit":"c1c50f34-5de6-4e3a-a879-d45a4b410db4"},"_deposit":{"created_by":3,"id":"7725","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"7725"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00007725","sets":["934:935:936"]},"author_link":["10442","10441","9757","10440"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1983-11-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicPageEnd":"820","bibliographicPageStart":"818","bibliographicVolumeNumber":"43","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters"}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Spontaneous emission and lasing gain profiles of semiconductor injection lasers which have Zn-doped GaAs active regions were experimentally determined, and the tailing phenomenon into the band gap of these profiles was theoretically explained as a result of relaxation time broadening due to scattering of electrons and holes. Especially, the tail of the gain profile was found to show a concave shape, which was better explained by the relaxation time broadening model than by the band tail state model.","subitem_description_type":"Abstract"}]},"item_4_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学大学院自然科学研究科電子科学","subitem_description_type":"Other"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.94520","subitem_relation_type_select":"DOI"}}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yamada, Minoru"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Tanaka, Akira"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Moriya, Kiyoshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kado, Yuichi"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"TE-PR-YAMADA-M-818.pdf","filesize":[{"value":"262.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"TE-PR-YAMADA-M-818.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/7725/files/TE-PR-YAMADA-M-818.pdf"},"version_id":"97188e3d-3247-4e7a-a911-27e97d2ce5fa"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Relaxation time broadening on emission spectrum of a Zn-doped p-type GaAs injection laser","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Relaxation time broadening on emission spectrum of a Zn-doped p-type GaAs injection laser"}]},"item_type_id":"4","owner":"3","path":["936"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"7725","relation_version_is_last":true,"title":["Relaxation time broadening on emission spectrum of a Zn-doped p-type GaAs injection laser"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-07-28T02:20:20.496814+00:00"}