@article{oai:kanazawa-u.repo.nii.ac.jp:00007738,
 author = {飯山, 宏一 and Takebe, Masahide and Nakamura, Kazuki and Paul, Narayan Chandra and Iiyama, Koichi and Takamiya, Saburo},
 issue = {3},
 journal = {IEEE Transactions on Electron Devices},
 month = {Mar},
 note = {Direct oxidation by an ultraviolet (UV) and ozone process and oxinitridation (plasma nitridation after oxidation) of GaAs surfaces were used to form nanometer-scale gate insulating layers for depletion-type recessed gate GaAs-MISFETs. The drain current-drain voltage characteristics of the oxide gate devices exhibit lower transconductance (max. 40 mS/mm), lower breakdown voltage and smaller gate capacitance than the oxinitrided gate devices. The presence of hysteresis in the oxide gate devices is also apparent. The maximum transconductance of the oxinitrided gate devices is 110 mS/mm and they have a sharper pinch-off, compared to the oxide gate devices. In addition, no hysteresis is observed in their current voltage curves. The current gain cutoff frequency of 1.4 μm gate-length FETs for both types is 6 GHz. These results correspond well with results obtained from characterization of these insulating films., 金沢大学工学部},
 pages = {311--316},
 title = {GaAs- MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces},
 volume = {51},
 year = {2004}
}