{"created":"2023-07-27T06:24:43.069706+00:00","id":7738,"links":{},"metadata":{"_buckets":{"deposit":"89634409-c550-4bda-bc25-34ee7b997fd3"},"_deposit":{"created_by":3,"id":"7738","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"7738"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00007738","sets":["4163:4171:4187"]},"author_link":["10474","10475","10476","2109","305","10477"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-03-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"316","bibliographicPageStart":"311","bibliographicVolumeNumber":"51","bibliographic_titles":[{"bibliographic_title":"IEEE Transactions on Electron Devices"}]}]},"item_4_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"飯山, 宏一"}],"nameIdentifiers":[{},{}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Direct oxidation by an ultraviolet (UV) and ozone process and oxinitridation (plasma nitridation after oxidation) of GaAs surfaces were used to form nanometer-scale gate insulating layers for depletion-type recessed gate GaAs-MISFETs. The drain current-drain voltage characteristics of the oxide gate devices exhibit lower transconductance (max. 40 mS/mm), lower breakdown voltage and smaller gate capacitance than the oxinitrided gate devices. The presence of hysteresis in the oxide gate devices is also apparent. The maximum transconductance of the oxinitrided gate devices is 110 mS/mm and they have a sharper pinch-off, compared to the oxide gate devices. In addition, no hysteresis is observed in their current voltage curves. The current gain cutoff frequency of 1.4 μm gate-length FETs for both types is 6 GHz. These results correspond well with results obtained from characterization of these insulating films.","subitem_description_type":"Abstract"}]},"item_4_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学工学部","subitem_description_type":"Other"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00007725","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1109/ted.2003.823049","subitem_relation_type_select":"DOI"}}]},"item_4_rights_23":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright © 2004 IEEE.. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE..IEEE Transactions on Electron Devices,51(3),pp.311-316"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0018-9383","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Takebe, Masahide"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakamura, Kazuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Paul, Narayan Chandra"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iiyama, Koichi"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Takamiya, Saburo"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"01268252.pdf","filesize":[{"value":"374.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"01268252.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/7738/files/01268252.pdf"},"version_id":"966a55d4-454f-4098-befd-e6237f45b490"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"GaAs- MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaAs- MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces"}]},"item_type_id":"4","owner":"3","path":["4187"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"7738","relation_version_is_last":true,"title":["GaAs- MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T10:33:40.572783+00:00"}