@article{oai:kanazawa-u.repo.nii.ac.jp:00007871,
 author = {Masaki, Yuichi and Ogata, Toshihiro and Ogawa, Hiroshi and Jones, David I.},
 issue = {9},
 journal = {Journal of Applied Physics},
 month = {Nov},
 note = {The kinetics of solid phase interaction between Al and a‐Si:H have been investigated. The experiment led to the observation of low‐temperature crystallization as has been reported. The crystallization temperature was found to be 300–350 °C from diffraction studies. From the x‐ray photoelectron spectroscopy study, electron transfer from Al to Si was observed in the intermixing layer in samples annealed at RT and 200 °C whereas there is no evidence of the electron transfer for 300 and 350 °C annealed samples. To explain these results, a comparison is made with the interaction in the Cr/a‐Si:H system previously reported and the interdiffusion model is proposed., 金沢大学工学部},
 pages = {5225--5231},
 title = {Kinetics of solid phase interaction between Al and a‐Si:H},
 volume = {76},
 year = {1994}
}