@article{oai:kanazawa-u.repo.nii.ac.jp:00007881,
 author = {飯山, 宏一 and 丸山, 武男 and Iiyama, Koichi and Takamatsu, Hideki and Maruyama, Takeo},
 journal = {European Conference on Optical Communication, ECOC},
 month = {Jan},
 note = {A Si APD was fabricated by standard 0.18 μm CMOS process. The maximum avalanche gain was 224 for only 8 V bias. The bandwidth was 1.6 GHz for low avalanche gain and 800 MHz for large avalanche gain. © VDE VERLAG GMBH., 金沢大学理工研究域電子情報学系},
 pages = {510--511},
 title = {Silicon lateral avalanche photodiodes fabricated by standard 0.18 µm CMOS process},
 year = {2009}
}