@article{oai:kanazawa-u.repo.nii.ac.jp:00007887,
 author = {Yamada, Minoru and Noda, Kazuhiro and Kuwamura, Yuji and Nakanishi, Hirohumi and Imai, Kiyohumi},
 issue = {9},
 journal = {IEICE TRANSACTIONS on Electronics},
 month = {Sep},
 note = {Operation of a newly proposed semiconductor optical modulator based on absorption control by electron depletion around a p-n junction is demonstrated, forming preliminary structures of waveguide-type as well as panel-type (or surface-illuminated type) devices. The optical absorption is occurred at the intrinsic energy levels in the band structure not at the extended state into the band-gap. Performance of 35 dB on-off extinction ratio for 4 V variation of the applied voltage was obtained in a waveguide type device. Validity of the proposed mechanism were confirmed by getting large change of the absorption coefficient of around 5000 cm-1 over wide wavelength range of 30 nm.},
 pages = {1063--1070},
 title = {Semiconductor optical modulator by using electron depleting absorption control},
 volume = {E75-C},
 year = {1992}
}