{"created":"2023-07-27T06:24:49.513485+00:00","id":7887,"links":{},"metadata":{"_buckets":{"deposit":"200c4496-87c4-4ce1-8e60-a4e580d2200c"},"_deposit":{"created_by":3,"id":"7887","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"7887"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00007887","sets":["934:935:936"]},"author_link":["10819","194","9757","10820","10818"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1992-09-20","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicPageEnd":"1070","bibliographicPageStart":"1063","bibliographicVolumeNumber":"E75-C","bibliographic_titles":[{"bibliographic_title":"IEICE TRANSACTIONS on Electronics"}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Operation of a newly proposed semiconductor optical modulator based on absorption control by electron depletion around a p-n junction is demonstrated, forming preliminary structures of waveguide-type as well as panel-type (or surface-illuminated type) devices. The optical absorption is occurred at the intrinsic energy levels in the band structure not at the extended state into the band-gap. Performance of 35 dB on-off extinction ratio for 4 V variation of the applied voltage was obtained in a waveguide type device. Validity of the proposed mechanism were confirmed by getting large change of the absorption coefficient of around 5000 cm-1 over wide wavelength range of 30 nm.","subitem_description_type":"Abstract"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences = 電子情報通信学会"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0916-8508","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yamada, Minoru"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Noda, Kazuhiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kuwamura, Yuji"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Nakanishi, Hirohumi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Imai, Kiyohumi"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"TE-PR-YAMADA-M-1992-1063.pdf","filesize":[{"value":"415.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"TE-PR-YAMADA-M-1992-1063.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/7887/files/TE-PR-YAMADA-M-1992-1063.pdf"},"version_id":"4e6a1022-0ced-4f5b-a71f-0cc13d41a95e"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Semiconductor optical modulator by using electron depleting absorption control","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Semiconductor optical modulator by using electron depleting absorption control"}]},"item_type_id":"4","owner":"3","path":["936"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"7887","relation_version_is_last":true,"title":["Semiconductor optical modulator by using electron depleting absorption control"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T09:48:50.416700+00:00"}