@article{oai:kanazawa-u.repo.nii.ac.jp:00008065,
 author = {飯山, 宏一 and 丸山, 武男 and Iiyama, Koichi and Takamatsu, Hideki and Maruyama, Takeo},
 issue = {12},
 journal = {IEEE Photonics Technology Letters},
 month = {Jan},
 note = {A hole-injection-type and an electron-injection-type Si avalanche photodiode (APD) were fabricated by a standard 0.18-μm complementary metaloxidesemiconductor process. The avalanche amplifications are observed below 10 V of the bias voltage, and the maximum avalanche gains were 493 and 417 for the hole-injection-type and the electron-injection-type APDs, respectively. The maximum bandwidth is 3.4 GHz, and the gain-bandwidth products were 90 and 180 GHz for the hole-injection-type and the electron-injection-type APDs, respectively. © 2006 IEEE., 金沢大学理工研究域電子情報学系},
 pages = {932--934},
 title = {Hole-injection-type and electron-injection-type silicon avalanche photodiodes fabricated by standard 0.18-μm CMOS process},
 volume = {22},
 year = {2010}
}