{"created":"2023-07-27T06:24:57.702685+00:00","id":8065,"links":{},"metadata":{"_buckets":{"deposit":"87c1bcbf-22a5-42a4-a26a-27285842dc37"},"_deposit":{"created_by":3,"id":"8065","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"8065"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00008065","sets":["4163:4171:4187"]},"author_link":["2109","305","2051","833","11162"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-01-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageEnd":"934","bibliographicPageStart":"932","bibliographicVolumeNumber":"22","bibliographic_titles":[{"bibliographic_title":"IEEE Photonics Technology Letters"}]}]},"item_4_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"飯山, 宏一"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"丸山, 武男"}],"nameIdentifiers":[{},{}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A hole-injection-type and an electron-injection-type Si avalanche photodiode (APD) were fabricated by a standard 0.18-μm complementary metaloxidesemiconductor process. The avalanche amplifications are observed below 10 V of the bias voltage, and the maximum avalanche gains were 493 and 417 for the hole-injection-type and the electron-injection-type APDs, respectively. The maximum bandwidth is 3.4 GHz, and the gain-bandwidth products were 90 and 180 GHz for the hole-injection-type and the electron-injection-type APDs, respectively. © 2006 IEEE.","subitem_description_type":"Abstract"}]},"item_4_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学理工研究域電子情報学系","subitem_description_type":"Other"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00008052","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE = Institute of Electrical and Electronics Engineers"}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1109/LPT.2010.2047389","subitem_relation_type_select":"DOI"}}]},"item_4_relation_27":{"attribute_name":"シリーズ","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"5445009"}]}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA10681067","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1041-1135","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Iiyama, Koichi"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Takamatsu, Hideki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Maruyama, Takeo"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"TE-PR-IIYAMA-K-932.pdf","filesize":[{"value":"218.4 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-IIYAMA-K-932.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/8065/files/TE-PR-IIYAMA-K-932.pdf"},"version_id":"dd7919e6-8e48-414a-b58c-68693644a981"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Hole-injection-type and electron-injection-type silicon avalanche photodiodes fabricated by standard 0.18-μm CMOS process","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Hole-injection-type and electron-injection-type silicon avalanche photodiodes fabricated by standard 0.18-μm CMOS process"}]},"item_type_id":"4","owner":"3","path":["4187"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"8065","relation_version_is_last":true,"title":["Hole-injection-type and electron-injection-type silicon avalanche photodiodes fabricated by standard 0.18-μm CMOS process"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T10:34:02.332590+00:00"}