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Si-H and N-H vibrational properties in glow-discharge amorphous SiNx:H films (0<x<1.55)
http://hdl.handle.net/2297/24511
http://hdl.handle.net/2297/24511d708e14e-da53-4d84-a6ef-f87355a61bb8
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-1990-KURATA-Y-2211.pdf (278.2 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-10-03 | |||||
| タイトル | ||||||
| タイトル | Si-H and N-H vibrational properties in glow-discharge amorphous SiNx:H films (0<x<1.55) | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Hasegawa, Seiichi
× Hasegawa, Seiichi× Matsuda, Masaaki× Kurata, Yoshihiro |
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| 書誌情報 |
Applied physics letters 巻 57, 号 21, p. 2211-2213, 発行日 1990-01-01 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00543431 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.104160 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Amorphous SiNx:H films were prepared by rf glow discharge of SiH4‐NH3 mixtures at 300 °C, and the SiH, NH, and SiN vibrational absorptions were investigated as a function of x. The stretching absorption profiles due to SiH and SiN bonds are reproduced by a superposition of two components at around 2000 and 2100 cm−1, and of three components at around 750, 840, and 960 cm−1, respectively. The dependence of these intensities on x was examined by means of a generation probability analysis on the basis of the random bonding model including SiH and NH bonds which play an important role in the film growth mechanism. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 関連URI | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://apl.aip.org/applab/v57/i21/p2211_s1?isAuthorized=no | |||||
