@article{oai:kanazawa-u.repo.nii.ac.jp:00008342,
 author = {森本, 章治 and 川江, 健 and Wang, Z. P. and Morimoto, Akiharu and Kawae, Takeshi and Ito, H. and Masugata, Katsumi},
 issue = {33},
 journal = {Physics Letters, Section A: General, Atomic and Solid State Physics},
 month = {Aug},
 note = {Preferentially-oriented aluminum nitride (AlN) films are grown directly on natively-oxidized Si (100) substrate by pulsed laser deposition (PLD) in nitrogen (N2) environment. The AlN preferential orientation changes from (002) to (100) with increasing N2 pressure. Such different behaviors are discussed in terms of deposition-rate-dependent preferential orientation, kinetic energy of depositing species and confinement of laser plume. Finally, sample deposited at 0.9 Pa is proved to have the highest (002) peak intensity, the lowest FWHM value, the highest deposition rate and a relatively low RMS roughness (1.138 nm), showing the optimal growth condition for c-axis-oriented AlN growth at this N2 pressure. © 2011 Elsevier B.V. All rights reserved., 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系},
 pages = {3007--3011},
 title = {Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition},
 volume = {375},
 year = {2011}
}