{"created":"2023-07-27T06:25:16.044315+00:00","id":8493,"links":{},"metadata":{"_buckets":{"deposit":"191c12d5-30e4-4e4a-a13c-fdb938a859dc"},"_deposit":{"created_by":3,"id":"8493","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"8493"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00008493","sets":["934:935:936"]},"author_link":["10808","11925","11924","11926"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-01-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"1389","bibliographicPageStart":"1381","bibliographicVolumeNumber":"17","bibliographic_titles":[{"bibliographic_title":"IEEE Journal on Selected Topics in Quantum Electronics"}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In this paper, the state-of-the art of long-wavelength GaInAsP/InP membrane semiconductor lasers, one of the most promising candidate light sources for optical interconnects and on-chip optical wiring between large-scale integrated circuits, is described. After an extensive review of research activities focused on laser preparation on either Si or Si-on-insulator substrate, the findings of our recent research activities on low power consumption lasers are presented. Specifically, our interest was set on the low-damage fabrication of strongly index-coupled grating, which is generally opted forDFB and distributed reflector (DR) lasers consisting of wire-like active regions, as well as of high index-contrast membrane waveguides. A submilliampere threshold current and a differential quantum efficiency close to 50 from the front facet were achieved in the case of the DR laser. On the other hand, a lateral current injection (LCI) structure, which can be combined with the membrane laser, was adopted for the realization of an injection-type membrane laser. The successful continuous wave operation of LCI lasers, prepared on a semiinsulating InP substrate, was achieved with moderately low threshold current at room temperature. © 2011 IEEE.","subitem_description_type":"Abstract"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1109/JSTQE.2011.2128859","subitem_relation_type_select":"DOI"}}]},"item_4_relation_27":{"attribute_name":"シリーズ","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"5753909"}]}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA11036333","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1077-260X","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Arai, Shigehisa"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nishiyama, Nobuhiko"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Maruyama, Takeo"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Okumura, Tadashi"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"TE-PR-MARUYAMA-T-1381.pdf","filesize":[{"value":"942.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"TE-PR-MARUYAMA-T-1381.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/8493/files/TE-PR-MARUYAMA-T-1381.pdf"},"version_id":"3f515b96-7148-44fb-9a5c-b645d78b9ec8"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"GaInAsP/InP membrane lasers for optical interconnects","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaInAsP/InP membrane lasers for optical interconnects"}]},"item_type_id":"4","owner":"3","path":["936"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"8493","relation_version_is_last":true,"title":["GaInAsP/InP membrane lasers for optical interconnects"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-07-28T02:08:49.902714+00:00"}