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Feasibility of Ultra-Thin Films for Gate Insulator by Limited Reaction Sputtering Process
http://hdl.handle.net/2297/34941
http://hdl.handle.net/2297/3494119059e2e-c130-42d7-b841-d44f141f2bd6
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-SASAKI-K-218-222.pdf (2.8 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-10-03 | |||||
| タイトル | ||||||
| タイトル | Feasibility of Ultra-Thin Films for Gate Insulator by Limited Reaction Sputtering Process | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Sasaki, Kimihiro
× Sasaki, Kimihiro× Kawai, Kentaro× Hasu, Tatsuhiro× Yabuuchi, Makoto× Hata, Tomonobu |
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| 書誌情報 |
IEICE Transactions on Electronics 巻 E87-C, 号 2, p. 218-222, 発行日 2004-02-01 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0916-8516 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA10826261 | |||||
| 出版者 | ||||||
| 出版者 | IEICE Institute of Electronics, Information and Communication Engineers 電子情報通信学会 | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | A new sputtering technique named "limited reaction sputtering" is proposed and the feasibility toward an ultra-thin gate insulator is investigated. 5-10 nm thick ZrO 2 films were prepared on Si(100) substrates and analyzed by XPS, HR-RBS and RHEED. Significant Zr diffusion into the Si substrate and interface oxidation were not observed. An optimum film was obtained at growth temperature of 300°C, oxygen flow rate of 4.2% and 500°C-10 sec RTA. The equivalent oxide thickness of 2 nm was realized with leakage current of 10 -7 A/cm 2 at 1.5 MV/cm. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
