{"created":"2023-07-27T06:25:32.987764+00:00","id":8893,"links":{},"metadata":{"_buckets":{"deposit":"5c414298-cbb0-4765-8d10-11199b107c0e"},"_deposit":{"created_by":3,"id":"8893","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"8893"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00008893","sets":["934:935:936"]},"author_link":["12611","11298","161","12612","12613"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-02-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"222","bibliographicPageStart":"218","bibliographicVolumeNumber":"E87-C","bibliographic_titles":[{"bibliographic_title":"IEICE Transactions on Electronics"}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A new sputtering technique named \"limited reaction sputtering\" is proposed and the feasibility toward an ultra-thin gate insulator is investigated. 5-10 nm thick ZrO 2 films were prepared on Si(100) substrates and analyzed by XPS, HR-RBS and RHEED. Significant Zr diffusion into the Si substrate and interface oxidation were not observed. An optimum film was obtained at growth temperature of 300°C, oxygen flow rate of 4.2% and 500°C-10 sec RTA. The equivalent oxide thickness of 2 nm was realized with leakage current of 10 -7 A/cm 2 at 1.5 MV/cm.","subitem_description_type":"Abstract"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEICE Institute of Electronics, Information and Communication Engineers 電子情報通信学会"}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA10826261","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0916-8516","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sasaki, Kimihiro"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Kawai, Kentaro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hasu, Tatsuhiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yabuuchi, Makoto"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hata, Tomonobu"}],"nameIdentifiers":[{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"TE-PR-SASAKI-K-218-222.pdf","filesize":[{"value":"2.8 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"TE-PR-SASAKI-K-218-222.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/8893/files/TE-PR-SASAKI-K-218-222.pdf"},"version_id":"c345b8c4-cf98-4f56-bb16-f8d41072e5e8"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Feasibility of Ultra-Thin Films for Gate Insulator by Limited Reaction Sputtering Process","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Feasibility of Ultra-Thin Films for Gate Insulator by Limited Reaction Sputtering Process"}]},"item_type_id":"4","owner":"3","path":["936"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"8893","relation_version_is_last":true,"title":["Feasibility of Ultra-Thin Films for Gate Insulator by Limited Reaction Sputtering Process"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T09:48:46.325440+00:00"}