@article{oai:kanazawa-u.repo.nii.ac.jp:00009037,
 author = {川江, 健 and 森本, 章治 and Nakata, Shunji and Kato, Takashi and Ozaki, Shinya and Kawae, Takeshi and Morimoto, Akiharu},
 journal = {Thin Solid Films},
 month = {Sep},
 note = {Thin film Al2O3/Al-rich Al2O 3/SiO2 structures were fabricated on p-Si substrates. Radio-frequency magnetron co-sputtering was used to form Al-rich Al 2O3 thin film as the charge-trapping layer of nonvolatile Al2O3 memory. Capacitance-voltage measurements showed a large hysteresis due to charge trapping in the Al-rich Al2O 3 layer. The charge trap density was estimated to be 42.7 × 1018 cm- 3, which is the largest value ever reported for an Al-rich Al2O3 layer; it is six times larger than that of a conventional metal-nitride-oxide-silicon memory. Thermal annealing was found to reduce the leakage current of the Al2O3 blocking layer, thereby providing this structure with better data retention at room temperature than an as-deposited one. In addition, the annealed structure was found to exhibit good data retention even at 100 C. © 2013 Elsevier B.V. All rights reserved., 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系},
 pages = {242--245},
 title = {Improvement of charge trapping characteristics of Al2O 3/Al-rich Al2O3/SiO2 stacked films by thermal annealing},
 volume = {542},
 year = {2013}
}