{"created":"2023-07-27T06:25:39.220355+00:00","id":9037,"links":{},"metadata":{"_buckets":{"deposit":"15c0d214-cd2b-4303-b589-f46d91eb7cbc"},"_deposit":{"created_by":3,"id":"9037","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"9037"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00009037","sets":["2438:4190:4191"]},"author_link":["12846","79672","10564","132","12847","12848"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-09-02","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"245","bibliographicPageStart":"242","bibliographicVolumeNumber":"542","bibliographic_titles":[{"bibliographic_title":"Thin Solid Films"}]}]},"item_4_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"川江, 健"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"森本, 章治"}],"nameIdentifiers":[{},{},{},{}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Thin film Al2O3/Al-rich Al2O 3/SiO2 structures were fabricated on p-Si substrates. Radio-frequency magnetron co-sputtering was used to form Al-rich Al 2O3 thin film as the charge-trapping layer of nonvolatile Al2O3 memory. Capacitance-voltage measurements showed a large hysteresis due to charge trapping in the Al-rich Al2O 3 layer. The charge trap density was estimated to be 42.7 × 1018 cm- 3, which is the largest value ever reported for an Al-rich Al2O3 layer; it is six times larger than that of a conventional metal-nitride-oxide-silicon memory. Thermal annealing was found to reduce the leakage current of the Al2O3 blocking layer, thereby providing this structure with better data retention at room temperature than an as-deposited one. In addition, the annealed structure was found to exhibit good data retention even at 100 C. © 2013 Elsevier B.V. All rights reserved.","subitem_description_type":"Abstract"}]},"item_4_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系","subitem_description_type":"Other"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00009024","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier B.V."}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.tsf.2013.06.005","subitem_relation_type_select":"DOI"}}]},"item_4_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.elsevier.com/locate/issn/00406090","subitem_relation_type_select":"URI"}}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00863068","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0040-6090","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nakata, Shunji"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kato, Takashi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ozaki, Shinya"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kawae, Takeshi"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Morimoto, Akiharu"}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"TE-PR-MORIMOTO-A-242.pdf","filesize":[{"value":"311.9 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-MORIMOTO-A-242.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/9037/files/TE-PR-MORIMOTO-A-242.pdf"},"version_id":"0482ca09-ee12-43be-8f4e-2c3a8bca3eb3"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Improvement of charge trapping characteristics of Al2O 3/Al-rich Al2O3/SiO2 stacked films by thermal annealing","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Improvement of charge trapping characteristics of Al2O 3/Al-rich Al2O3/SiO2 stacked films by thermal annealing"}]},"item_type_id":"4","owner":"3","path":["4191"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"9037","relation_version_is_last":true,"title":["Improvement of charge trapping characteristics of Al2O 3/Al-rich Al2O3/SiO2 stacked films by thermal annealing"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T10:10:34.719631+00:00"}