@article{oai:kanazawa-u.repo.nii.ac.jp:00009157,
 author = {飯山, 宏一 and 丸山, 武男 and Iiyama, Koichi and Shimotori, Toshiyuki and Gyobu, Ryoichi and Hishiki, Takuya and Maruyama, Takeo},
 journal = {2014 OptoElectronics and Communication Conference, OECC 2014 and Australian Conference on Optical Fibre Technology, ACOFT 2014},
 month = {Jul},
 note = {Silicon avalanche photodiode was fabricated by O.lSjum CMOS process and was characterized. The bandwidth of 10GHz with the sensitivity of 0.1 AW was achieved with the electrode spacing of 0.84/μm and the detection area of 10x10/μm2. © 2014 Engineers Australia.},
 pages = {243--244},
 title = {10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 μm CMOS process},
 year = {2014}
}