{"created":"2023-07-27T06:25:44.199587+00:00","id":9157,"links":{},"metadata":{"_buckets":{"deposit":"92c080c9-0dac-43c0-a596-9e2c7faca8d7"},"_deposit":{"created_by":3,"id":"9157","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"9157"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00009157","sets":["4163:4171:4187"]},"author_link":["13048","2109","13046","2051","80022","13049","13047"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014-07-10","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"244","bibliographicPageStart":"243","bibliographic_titles":[{"bibliographic_title":"2014 OptoElectronics and Communication Conference, OECC 2014 and Australian Conference on Optical Fibre Technology, ACOFT 2014"}]}]},"item_4_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"飯山, 宏一"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"丸山, 武男"}],"nameIdentifiers":[{},{}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Silicon avalanche photodiode was fabricated by O.lSjum CMOS process and was characterized. The bandwidth of 10GHz with the sensitivity of 0.1 AW was achieved with the electrode spacing of 0.84/μm and the detection area of 10x10/μm2. © 2014 Engineers Australia.","subitem_description_type":"Abstract"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00009144","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE Computer Society"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Iiyama, Koichi"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Shimotori, Toshiyuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Gyobu, Ryoichi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hishiki, Takuya"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Maruyama, Takeo"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"TE-PR-IIYAMA-K-243.pdf","filesize":[{"value":"811.9 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-IIYAMA-K-243.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/9157/files/TE-PR-IIYAMA-K-243.pdf"},"version_id":"27889360-0901-4f49-9218-c62301e163f7"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 μm CMOS process","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 μm CMOS process"}]},"item_type_id":"4","owner":"3","path":["4187"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"9157","relation_version_is_last":true,"title":["10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 μm CMOS process"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T09:48:42.717783+00:00"}