@article{oai:kanazawa-u.repo.nii.ac.jp:00009250,
 author = {川江, 健 and 森本, 章治 and Nomura, Yukihiro and Nomura, Keisuke and Kinoshita, Koyo and Kawae, Takeshi and Morimoto, Akiharu},
 issue = {6},
 journal = {Physica Status Solidi - Rapid Research Letters},
 month = {Jun},
 note = {(Bi0.9Pr0.1)(Fe0.97Mn0.03)O3 (BPFM) thin film was deposited on Pt-coated Si(100) substrate by chemical solution deposition. Remnant polarization and coercive field in the BPFM film capacitor were 113 °C/cm2 and 630 kV/cm at the maximum electric field of 1000 kV/cm, respectively. Switching charge measured by a rectangular pulse measurement was 118 °C/cm2. Almost no polarization losses of BPFM film capacitor were observed even after retention time of 104 s at room temperature. Furthermore, the polarization loss at 450 °C was only 3.7% even after 104 s. These results indicate that BPFM film capacitor is suitable for non-volatile memory applications at high temperature. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim., 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系},
 pages = {536--539},
 title = {Retention properties with high-temperature resistance in (Bi,Pr)(Fe,Mn)O3 thin film capacitor},
 volume = {8},
 year = {2014}
}