{"created":"2023-07-27T06:25:48.154477+00:00","id":9250,"links":{},"metadata":{"_buckets":{"deposit":"e4b6084f-b949-49b3-ad42-9a46df389293"},"_deposit":{"created_by":3,"id":"9250","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"9250"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00009250","sets":["2438:4190:4191"]},"author_link":["13262","79672","10564","132","13263","13264"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014-06-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"539","bibliographicPageStart":"536","bibliographicVolumeNumber":"8","bibliographic_titles":[{"bibliographic_title":"Physica Status Solidi - Rapid Research Letters"}]}]},"item_4_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"川江, 健"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"森本, 章治"}],"nameIdentifiers":[{},{},{},{}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"(Bi0.9Pr0.1)(Fe0.97Mn0.03)O3 (BPFM) thin film was deposited on Pt-coated Si(100) substrate by chemical solution deposition. Remnant polarization and coercive field in the BPFM film capacitor were 113 °C/cm2 and 630 kV/cm at the maximum electric field of 1000 kV/cm, respectively. Switching charge measured by a rectangular pulse measurement was 118 °C/cm2. Almost no polarization losses of BPFM film capacitor were observed even after retention time of 104 s at room temperature. Furthermore, the polarization loss at 450 °C was only 3.7% even after 104 s. These results indicate that BPFM film capacitor is suitable for non-volatile memory applications at high temperature. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.","subitem_description_type":"Abstract"}]},"item_4_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系","subitem_description_type":"Other"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00009237","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Wiley-VCH Verlag"}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1002/pssr.201309022","subitem_relation_type_select":"DOI"}}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA1253461X","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1862-6254","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nomura, Yukihiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nomura, Keisuke"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Koyo"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kawae, Takeshi"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Morimoto, Akiharu"}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"TE-PR-MORIMOTO-A-536.pdf","filesize":[{"value":"411.7 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-MORIMOTO-A-536.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/9250/files/TE-PR-MORIMOTO-A-536.pdf"},"version_id":"e51aaecb-efb0-4feb-8e59-a813c9e9ce2d"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Retention properties with high-temperature resistance in (Bi,Pr)(Fe,Mn)O3 thin film capacitor","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Retention properties with high-temperature resistance in (Bi,Pr)(Fe,Mn)O3 thin film capacitor"}]},"item_type_id":"4","owner":"3","path":["4191"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"9250","relation_version_is_last":true,"title":["Retention properties with high-temperature resistance in (Bi,Pr)(Fe,Mn)O3 thin film capacitor"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T10:10:36.143010+00:00"}