{"created":"2023-07-27T06:25:53.418780+00:00","id":9375,"links":{},"metadata":{"_buckets":{"deposit":"54b5cda8-5f71-40e9-b9e7-999115ad628c"},"_deposit":{"created_by":3,"id":"9375","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"9375"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00009375","sets":["934:935:936"]},"author_link":["13084","13463","13464"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1996-01-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"99","bibliographicPageStart":"95","bibliographicVolumeNumber":"62","bibliographic_titles":[{"bibliographic_title":"精密工学会誌 = Journal of the Japan Society for Precision Engineering"}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"This paper describes some experiments for breaking a silicon wafer precisely using YAG laser. The popular mechanical cutting of a silicon wafer using a diamond blade is not always high quality. The noncontact cutting of ceramics using CO2 laser is recently being studied enthusiastically. The precise breaking of a silicon wafer, however, has never been achieved. In the experiments, the conditions and the quality of double irradiation breaking are searched in various atmospheres. It is found that air cooling, water cooling and assist gas method has similar breaking forms. Main crack meanders and it is accompanied with some branching cracks which deteriorate the breaking quality of a silicon wafer. However, local cooling method enabled high quality breaking. The measurement results of the surface roughness of cross section are extremely small, 0.003-0.004 μm at Ra. It is also shown that the crack propagation velocity of local cooling breaking is about 10m/s higher than that of other ones.","subitem_description_type":"Abstract"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"精密工学会 = The Japan Society for Precision Engineering"}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.2493/jjspe.62.95","subitem_relation_type_select":"DOI"}}]},"item_4_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.jstage.jst.go.jp/browse/jjspe/-char/ja/","subitem_relation_type_select":"URI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.jspe.or.jp/","subitem_relation_type_select":"URI"}}]},"item_4_rights_23":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright © The Japan Society for Precision Engineering 精密工学会"}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AN1003250X","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0912-0289","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"黒部, 利次"}],"nameIdentifiers":[{"nameIdentifier":"13084","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"60019742","nameIdentifierScheme":"研究者番号","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000060019742"}]},{"creatorNames":[{"creatorName":"野口, 通一"}],"nameIdentifiers":[{"nameIdentifier":"13463","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"松本, 貴宏"}],"nameIdentifiers":[{"nameIdentifier":"13464","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"TE-PR-KUROBE-T-95.pdf","filesize":[{"value":"1.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"TE-PR-KUROBE-T-95.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/9375/files/TE-PR-KUROBE-T-95.pdf"},"version_id":"f6962c10-fa61-42cc-93af-c15d23a16034"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"YAGレーザによるシリコンウエハの精密割断: 鏡面冷却二重照射割断","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"YAGレーザによるシリコンウエハの精密割断: 鏡面冷却二重照射割断"},{"subitem_title":"Precision Breaking of a Silicon Wafer by YAG Laser: double Irradiation Breaking Assisted by Mirror Surface Cooling","subitem_title_language":"en"}]},"item_type_id":"4","owner":"3","path":["936"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"9375","relation_version_is_last":true,"title":["YAGレーザによるシリコンウエハの精密割断: 鏡面冷却二重照射割断"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-06-20T06:13:36.522137+00:00"}