{"created":"2023-07-27T06:25:55.901358+00:00","id":9434,"links":{},"metadata":{"_buckets":{"deposit":"b781627d-becc-4f6c-b6c2-e89480fc658a"},"_deposit":{"created_by":3,"id":"9434","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"9434"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00009434","sets":["4163:4171:4187"]},"author_link":["13581","2109","305","13582","2051","80022","13580"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-10-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7289585","bibliographicPageEnd":"102","bibliographicPageStart":"99","bibliographic_titles":[{"bibliographic_title":"2015 International Conference on Telematics and Future Generation Networks, TAFGEN 2015"}]}]},"item_4_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"飯山, 宏一"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"丸山, 武男"}],"nameIdentifiers":[{},{}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Silicon avalanche photodiode (APD) was fabricated by standard 0.18 μm CMOS process. The current-voltage characteristic and frequency response was measured for the APD with and without guard ring. With the guard ring around the perimeter of the diode junction, it shows a better performance for the maximum bandwidth but in contrast lower in responsivity. To enhance the bandwidth, the detection area and the PAD size for RF probing are optimized to 10 × 10 μm2 and 30 × 30 μm2, respectively, to decrease the device capacitance, the spacing of interdigital electrode is narrowed to 0.84 μm to decrease carrier transit time, and by cancelling the carriers photo-generated in the deep layer and the substrate because the carriers are slow diffusion carriers. As a result, the maximum bandwidth of 8 GHz was achieved along with a gain-bandwidth product of 280 GHz. © 2015 IEEE.","subitem_description_type":"Abstract"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00009421","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Institute of Electrical and Electronics Engineers Inc."}]},"item_4_relation_10":{"attribute_name":"ISBN","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"978-147997315-6","subitem_relation_type_select":"ISBN"}}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1109/TAFGEN.2015.7289585","subitem_relation_type_select":"DOI"}}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Zul, Atfyi Fauzan M. N."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iiyama, Koichi"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Gyobu, Ryoichi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hishiki, Takuya"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Maruyama, Takeo"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"TE-PR-IIYAMA-K-99.pdf","filesize":[{"value":"502.3 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-IIYAMA-K-99.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/9434/files/TE-PR-IIYAMA-K-99.pdf"},"version_id":"25c9bf59-6a12-4a86-957b-5b6ee29869a1"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation"}]},"item_type_id":"4","owner":"3","path":["4187"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"9434","relation_version_is_last":true,"title":["Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T10:34:12.434413+00:00"}