@article{oai:kanazawa-u.repo.nii.ac.jp:00009593,
 author = {松本, 翼 and 猪熊, 孝夫 and 德田, 規夫 and 山﨑, 聡 and Matsumoto, Tsubasa and Kato, Hiromitsu and Oyama, Kazuhiro and Makino, Toshiharu and Ogura, Masahiko and Takeuchi, Daisuke and Inokuma, Takao and Tokuda, Norio and Yamasaki, Satoshi},
 journal = {Scientific Reports},
 month = {Aug},
 note = {We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm2/Vs, respectively, at room temperature. © The Author(s) 2016., 金沢大学ナノマテリアル研究所},
 title = {Inversion channel diamond metaloxide-semiconductor field-effect transistor with normally off characteristics},
 volume = {6},
 year = {2016}
}