@article{oai:kanazawa-u.repo.nii.ac.jp:00009688,
 author = {中村, 静夫 and 林, 良茂 and 川西, 琢也 and 小松, 利照 and 竹内, 昌史},
 issue = {1159},
 journal = {Journal of the Ceramic Society of Japan = 日本セラミックス協会学術論文誌},
 month = {Mar},
 note = {Zirconia films were prepared by the CVD method using thermal decomposition of zirconium-tetra-i-propoxide with He gas under 20 kPa. The films on the substrate consisted of fine particles less than 1μm and were metastable tetragonal-zirconia. The maximum deposition rate was 6 nm/s at 673 K and a reactant gas concentration of 0.05 mol%. The profile of deposition rate was calculated using a simplified reaction and coagulation model. The calculated results showed a good agreement with the experimental data under the operating conditions of 673 K and 0.07 mol%. Deposition rates for the system used are estimated with this model., 金沢大学理工研究域自然システム学系},
 pages = {266--271},
 title = {熱CVD法によるジルコニア膜合成時の堆積速度の推定},
 volume = {100},
 year = {1992}
}