@article{oai:kanazawa-u.repo.nii.ac.jp:00009720,
 author = {Kumeda, Minoru and Takahashi, Yukio and Shimizu, Tatsuo},
 issue = {5},
 journal = {Physical Review -Series B-},
 month = {Jan},
 note = {Fluorinated amorphous silicon (a-Si:F) films are prepared by three different methods: glow-discharge decomposition of SiF2 gas, magnetron sputtering, and conventional diode sputtering. The incorporation scheme of F atoms is investigated by means of nuclear magnetic resonance (NMR) and infrared (ir) absorption measurements. 19F NMR signals observed at 4.2 K can be simulated by superposing signals from dispersed F atoms, clustered F atoms, SiF4 molecules, and SiF3 species. The content of SiF4 increases by annealing in agreement with an increase in the intensity of ir absorption at 1020 cm-1. 19F NMR signals at 77 K and at room temperature show the effect of motional narrowing because SiF4 molecules move easily in the amorphous network.},
 pages = {2713--2719},
 title = {Fluorine-incorporation scheme in fluorinated amorphous silicon prepared by various methods.},
 volume = {36},
 year = {1987}
}