@article{oai:kanazawa-u.repo.nii.ac.jp:00009737,
 author = {森本, 章治 and 久米田, 稔 and 清水, 立生 and Morimoto, Akiharu and Matsumoto, Minoru and Yoshita, Masahiro and Kumeda, Minoru and Shimizu, Tatsuo},
 issue = {17},
 journal = {Applied physics letters},
 month = {Oct},
 note = {O, N, or C impurity was separately incorporated into a‐Si:H films by hot‐wall glow discharge decomposition. The effect of the impurity incorporation was investigated by electrical and electron spin resonance measurements. Both O and N impurities were found to increase the dark conductivity by decreasing its activation energy in a‐Si:H films. Furthermore, it was found that O and N impurities delay the photoresponse. C impurity, however, has no appreciable effect on them. These findings suggest that O and N impurities shift the Fermi level upward and form a trapping state for photoexcited electrons, supporting our O+3 and N+4 model., 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報学系 / 金沢大学工学部},
 pages = {2130--2132},
 title = {Doping effect of oxygen or nitorogen impurity in hydrogenated amoorphous silicon films},
 volume = {59},
 year = {1991}
}