| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2017-10-03 |
| タイトル |
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|
タイトル |
Origin of surface defects in a-Si:H films |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 著者 |
Yan, H.
Morimoto, Akiharu
Kumeda, Minoru
Shimizu, Tatsuo
Yonezawa, Yasuto
|
| 著者別表示 |
森本, 章治
久米田, 稔
清水, 立生
|
| 提供者所属 |
|
|
内容記述タイプ |
Other |
|
内容記述 |
金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報学系 / 金沢大学工学部 |
| 書誌情報 |
Materials Research Society Symposium Proceedings
巻 258,
p. 247-252,
発行日 1992-01-01
|
| ISSN |
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収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0272-9172 |
| NCID |
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収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA10616881 |
| DOI |
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|
関連タイプ |
isIdenticalTo |
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識別子タイプ |
DOI |
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|
関連識別子 |
https://doi.org/10.1557/PROC-258-247 |
| 出版者 |
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出版者 |
Materials Research Society |
| 抄録 |
|
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内容記述タイプ |
Abstract |
|
内容記述 |
Surface oxidation and surface defect creation processes in a-Si:H films have been studied in detail by means of electron spin resonance(ESR) and X-ray photoelectron spectroscopy(XPS). It is found that Si dangling bonds created by the surface oxidation distribute far wider than the thickness of the SiO2 layer. These defects are also found to be removed out by annealing at around 100cC. These defects are proposed to be created by a stress in a-Si:H induced by the surface oxidation. Moreover, the presence of the surface defects unrelated to oxidation is shown for the first time by the present experiment. The origin of these defects, however, are not clear at present. |
| 著者版フラグ |
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|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
TE-PR-YAN-H-1992-247.pdf (244.0 kB)
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