@article{oai:kanazawa-u.repo.nii.ac.jp:00009792,
 author = {森本, 章治 and 久米田, 稔 and 清水, 立生 and Yan, H. and Morimoto, Akiharu and Kumeda, Minoru and Shimizu, Tatsuo and Yonezawa, Yasuto},
 journal = {Materials Research Society Symposium Proceedings},
 month = {Jan},
 note = {Surface oxidation and surface defect creation processes in a-Si:H films have been studied in detail by means of electron spin resonance(ESR) and X-ray photoelectron spectroscopy(XPS). It is found that Si dangling bonds created by the surface oxidation distribute far wider than the thickness of the SiO2 layer. These defects are also found to be removed out by annealing at around 100cC. These defects are proposed to be created by a stress in a-Si:H induced by the surface oxidation. Moreover, the presence of the surface defects unrelated to oxidation is shown for the first time by the present experiment. The origin of these defects, however, are not clear at present., 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報学系 / 金沢大学工学部},
 pages = {247--252},
 title = {Origin of surface defects in a-Si:H films},
 volume = {258},
 year = {1992}
}