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Spectral responses of GaAs photodiodes fabiricated by rapid thermal diffusion
http://hdl.handle.net/2297/24543
http://hdl.handle.net/2297/24543b275ef38-d723-4ba7-ab47-e9d981221e61
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-USAMI-A-1992-59.pdf (153.3 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-10-03 | |||||
| タイトル | ||||||
| タイトル | Spectral responses of GaAs photodiodes fabiricated by rapid thermal diffusion | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Usami, Akira
× Usami, Akira× Kitagawa, Akio× Wada, Takao× Suzuki, Masakuni× Tokuda, Yutaka× Kan, Hirofumi |
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| 書誌情報 |
IEEE Election Device Letters 巻 13, 号 1, p. 59-60, 発行日 1992-01-01 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0741-3106 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00231428 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1109/55.144951 | |||||
| 出版者 | ||||||
| 出版者 | IEEE = Institute of Electrical and Electronics Engineers | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The spectral responses of GaAs photodiodes fabricated by rapid thermal diffusion (RTD) of Zn are presented. The authors tried controlling the p+-n junction depth by the heating rate of RTD, without extending the diffusion time. It is found that Zn diffuses from the surface to a deeper position as the heating rate increases. Consequently, the spectral response of photodiodes formed by RTD is strongly dependent on the heating rate of RTD. A large improvement in the short-wavelength response between 400 and 800 nm is observed as the heating rate decreases. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
