@article{oai:kanazawa-u.repo.nii.ac.jp:00009880,
 author = {Usami, Akira and Kitagawa, Akio and Wada, Takao and Suzuki, Masakuni and Tokuda, Yutaka and Kan, Hirofumi},
 issue = {1},
 journal = {IEEE Election Device Letters},
 month = {Jan},
 note = {The spectral responses of GaAs photodiodes fabricated by rapid thermal diffusion (RTD) of Zn are presented. The authors tried controlling the p+-n junction depth by the heating rate of RTD, without extending the diffusion time. It is found that Zn diffuses from the surface to a deeper position as the heating rate increases. Consequently, the spectral response of photodiodes formed by RTD is strongly dependent on the heating rate of RTD. A large improvement in the short-wavelength response between 400 and 800 nm is observed as the heating rate decreases.},
 pages = {59--60},
 title = {Spectral responses of GaAs photodiodes fabiricated by rapid thermal diffusion},
 volume = {13},
 year = {1992}
}