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Preparation of ZrO2 ultrathin films as gate dielectrics by limited reaction sputtering-On growth delay time at initial growth stage
http://hdl.handle.net/2297/10944
http://hdl.handle.net/2297/10944738487d4-daad-4a6a-9d8f-1e5633edbc12
名前 / ファイル | ライセンス | アクション |
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TE-PR-ZHOU-Y-6131.pdf (291.4 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-10-03 | |||||
タイトル | ||||||
タイトル | Preparation of ZrO2 ultrathin films as gate dielectrics by limited reaction sputtering-On growth delay time at initial growth stage | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Zhou, Y.
× Zhou, Y.× Kojima, N.× Sugiyama, H.× Ohara, K.× Sasaki, K. |
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書誌情報 |
Applied Surface Science 巻 254, 号 19, p. 6131-6134, 発行日 2008-07-30 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0169-4332 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10503400 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.apsusc.2008.02.135 | |||||
出版者 | ||||||
出版者 | Elsevier | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | ZrO2 thin films were produced by limited reaction sputtering process varying the deposition parameters. An interesting growth phenomenon was observed in the initial growth stage of amorphous samples, appearing to suppress film growth for the first several minutes. The structures of such ultrathin ZrO2 films were investigated by high-resolution Rutherford backscattering (HR-RBS) and X-ray photoelectron spectroscopy (XPS). The results suggest that the existence of interfacial suboxides due to the adsorption-induced surface reaction and diffusion-induced internal reaction, lead to the deteriorated interfacial performance. The mechanism and effects of the growth delay time on the interfacial characteristics are discussed in detail. © 2008 Elsevier B.V. All rights reserved. | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |