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  1. B. 理工学域; 数物科学類・物質化学類・機械工学類・フロンティア工学類・電子情報通信学類・地球社会基盤学類・生命理工学類
  2. b 10. 学術雑誌掲載論文
  3. 1.査読済論文(理)

Chelant-induced reclamation of indium from the spent liquid crystal display panels with the aid of microwave irradiation

http://hdl.handle.net/2297/34665
http://hdl.handle.net/2297/34665
768295d1-0202-4c4a-9dc6-df0e0d999d01
名前 / ファイル ライセンス アクション
SC-PR-HASEGAWA-H-10.pdf SC-PR-HASEGAWA-H-10.pdf (450.7 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2017-10-03
タイトル
タイトル Chelant-induced reclamation of indium from the spent liquid crystal display panels with the aid of microwave irradiation
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 Hasegawa, Hiroshi

× Hasegawa, Hiroshi

WEKO 145
e-Rad 90253335
金沢大学研究者情報 90253335
研究者番号 90253335

Hasegawa, Hiroshi

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Rahman, Ismail M. M.

× Rahman, Ismail M. M.

WEKO 16131

Rahman, Ismail M. M.

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Egawa, Yuji

× Egawa, Yuji

WEKO 16132

Egawa, Yuji

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Sawai, Hikaru

× Sawai, Hikaru

WEKO 16133

Sawai, Hikaru

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Begum, Zinnat A.

× Begum, Zinnat A.

WEKO 16134

Begum, Zinnat A.

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Maki, Teruya

× Maki, Teruya

WEKO 138
金沢大学研究者情報 70345601
研究者番号 70345601

Maki, Teruya

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Mizutani, Satoshi

× Mizutani, Satoshi

WEKO 16135

Mizutani, Satoshi

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書誌情報 Journal of Hazardous Materials

巻 254-255, 号 1, p. 10-17, 発行日 2013-06-05
ISSN
収録物識別子タイプ ISSN
収録物識別子 0304-3894
NCID
収録物識別子タイプ NCID
収録物識別子 AA00699157
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 10.1016/j.jhazmat.2013.03.028
出版者
出版者 Elsevier B.V.
抄録
内容記述タイプ Abstract
内容記述 Indium is a rare metal that is mostly consumed as indium tin oxide (ITO) in the fabrication process of liquid crystal display (LCD) panels. The spent LCD panels, termed as LCD-waste hereafter, is an increasing contributor of electronic waste burden worldwide and can be an impending secondary source of indium. The present work reports a new technique for the reclamation of indium from the unground LCD-waste using aminopolycarboxylate chelants (APCs) as the solvent in a hyperbaric environment and at a high-temperature. Microwave irradiation was used to create the desired system conditions, and a substantial abstraction of indium (≥80%) from the LCD-waste with the APCs (EDTA or NTA) was attained in the acidic pH region (up to pH 5) at the temperature of ≥120. °C and the pressure of ~50. bar. The unique point of the reported process is the almost quantitative recovery of indium from the LCD-waste that ensured via the combination of the reaction facilitatory effect of microwave exposure and the metal extraction capability of APCs. A method for the selective isolation of indium from the extractant solution and recycle of the chelant in solution is also described. © 2013 Elsevier B.V.
著者版フラグ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
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