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  1. B. 理工学域; 数物科学類・物質化学類・機械工学類・フロンティア工学類・電子情報通信学類・地球社会基盤学類・生命理工学類
  2. b 40. 学会・会議等発表資料
  3. Recent development in computational science
  4. Vol. 2

Compression Stress Effect on Dislocations Movement and Crack propagation in Cubic Crystal

http://hdl.handle.net/2297/44056
http://hdl.handle.net/2297/44056
fbb8dfa8-524a-45e4-bfe8-bb9753372fa8
名前 / ファイル ライセンス アクション
ISCS2011Proceedings-1-7.pdf ISCS2011Proceedings-1-7.pdf (2.3 MB)
Item type 報告書 / Research Paper(1)
公開日 2017-10-03
タイトル
タイトル Compression Stress Effect on Dislocations Movement and Crack propagation in Cubic Crystal
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_18ws
資源タイプ research report
著者 Suprijadi

× Suprijadi

WEKO 18872

Suprijadi

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Ely, Aprilia

× Ely, Aprilia

WEKO 18873

Ely, Aprilia

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Meiqorry, Yusfi

× Meiqorry, Yusfi

WEKO 18874

Meiqorry, Yusfi

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書誌情報 Recent development in computational science : Selected Papers from the International Symposium on Computational Science - International Symposium on Computational Science Kanazawa University, Japan

巻 2, p. 1-7, 発行日 2011-10-01
ISSN
収録物識別子タイプ ISSN
収録物識別子 2223-0785
出版者
出版者 Kanazawa e-Publishing
抄録
内容記述タイプ Abstract
内容記述 Fracture material is seriously problem in daily life, and it has connection with mechanical properties itself. The mechanical properties is belief depend on dislocation movement and crack propagation in the crystal. Information about this is very important to characterize the material. In FCC crystal structure the competition between crack propagation and dislocation wake is very interesting, in a ductile material like copper (Cu) dislocation can be seen in room temperature, but in a brittle material like Si only cracks can be seen observed. Different techniques were applied to material to study the mechanical properties, in this study we did compression test in one direction. Combination of simulation and experimental on cubic material are reported in this paper. We found that the deflection of crack direction in Si caused by vacancy of lattice, while compression stress on Cu cause the atoms displacement in one direction. Some evidence of dislocation wake in Si crystal under compression stress at high temperature will reported.
権利
権利情報 Organizing Committee of ISCS
著者版フラグ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
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