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Interfacial neutral- and charged-dangling-bond densities between hydrogenated amorphous silicon and hydrogenated amorphous silicon nitride in top nitride and bottom nitride structures
https://doi.org/10.24517/00064701
https://doi.org/10.24517/00064701c68e24a0-de4a-4e9f-9b02-f4bd8970f3e4
| 名前 / ファイル | ライセンス | アクション |
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TE-PR-MORIMOTO-A-2718.pdf (351.6 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
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| 公開日 | 2022-01-13 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Interfacial neutral- and charged-dangling-bond densities between hydrogenated amorphous silicon and hydrogenated amorphous silicon nitride in top nitride and bottom nitride structures | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| ID登録 | ||||||||||||
| ID登録 | 10.24517/00064701 | |||||||||||
| ID登録タイプ | JaLC | |||||||||||
| 著者 |
Min, Hoonke
× Min, Hoonke× Fukushi, Iwao× Masuda, Atsushi× Morimoto, Akiharu× Kumeda, Minoru× Shimizu, Tatsuo |
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| 著者別表示 |
森本, 章治
× 森本, 章治
× 久米田, 稔
× 清水, 立生
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| 提供者所属 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系 | |||||||||||
| 書誌情報 |
Applied Physics Letters p. 2718, 発行日 1995 |
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| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||
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| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 1077-3118 | |||||||||||
| NCID | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA00543431 | |||||||||||
| DOI | ||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | 10.1063/1.113499 | |||||||||||
| 出版者 | ||||||||||||
| 出版者 | American Institute of Physics | |||||||||||
| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | The bilayer structures composed of hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-Si3N4:H) are prepared on fused-quartz substrates and their interfacial Si dangling bonds (DBs) are evaluated by electron spin resonance (ESR). The ESR study reveals that the bottom nitride (BN) structure (a-Si:H/a-Si3N4:H/fused quartz) has a smaller amount of neutral DBs in the interface than the top nitride (TN) structure (a-Si3N4:H/a-Si:H/fused quartz). The photoconductivity measurements also support this finding. A larger amount of charged DBs in the interface, however, exist in the BN structure than in the TN structure. The larger amount of interfacial neutral DBs in the TN structure is likely to be caused by the UV irradiation from the plasma during the deposition of a-Si3N4:H layer.© 1995 American Institute of Physics. | |||||||||||
| 権利 | ||||||||||||
| 権利情報 | Copyright © American Institute of Physics | |||||||||||
| 著者版フラグ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
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| 識別子タイプ | URI | |||||||||||
| 関連識別子 | http://apl.aip.org/ | |||||||||||
| 関連名称 | http://apl.aip.org/ | |||||||||||
