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Roles of SiH4 in growth, structural changes and optical properties of nanocrystalline silicon thin films
https://doi.org/10.24517/00064710
https://doi.org/10.24517/0006471009764a4f-19cf-4fd6-a1ad-baa148c3c64e
| 名前 / ファイル | ライセンス | アクション |
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TE-PR-MORIMOTO-A-1370.68.pdf (1.3 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
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| 公開日 | 2022-01-24 | |||||||||
| タイトル | ||||||||||
| タイトル | Roles of SiH4 in growth, structural changes and optical properties of nanocrystalline silicon thin films | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| ID登録 | ||||||||||
| ID登録 | 10.24517/00064710 | |||||||||
| ID登録タイプ | JaLC | |||||||||
| 著者 |
Ali, A.M.
× Ali, A.M.× Inokuma, Takao× Al-Hajry, A.× Kobayashi, Hidetsugu× Umezu, I.× Morimoto, Akiharu |
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| 著者別表示 |
猪熊, 孝夫
× 猪熊, 孝夫
× 森本, 章治
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| 提供者所属 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系 | |||||||||
| 書誌情報 |
AIP Conference Proceedings 巻 1370, p. 68-74, 発行日 2011 |
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| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0094-243X | |||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 1551-7616 | |||||||||
| NCID | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00502977 | |||||||||
| DOI | ||||||||||
| 関連タイプ | isIdenticalTo | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | 10.1063/1.3638084 | |||||||||
| 出版者 | ||||||||||
| 出版者 | American Institute of Physics | |||||||||
| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | Nanocrystalline silicon (ns-Si) thin films deposited through plasma-enhanced chemical vapor deposition technique were studied. These films were grown at low deposition temperature of 200°C and at different silane flow rates ([SiH4]). Characterization of these films with Raman spectroscopy, x-ray diffraction and atomic force microscopy revealed that no films deposited at [SiH4]=0.0sccm. In addition, the structural change from an amorphous to a nanocrystalline phase at [SiH4]=0.2sccm. The Fourier transform infrared spectroscopic analysis showed at low values of [SiH4](0.1sccm), no hydrogen incorporated in the nc-Si thin film. However, the intensity of the spectra around 2100 cm-1 is likely to decreases with increasing [SiH4]. We have observed photoluminescence (PL) at room temperature in the range of 1.7 eV to 2.4 eV for all the films. Presence of the very small crystallites (the size less than 20 nm) responsible for quantum confinement effect. Variations of the PL intensity, width and position are well correlation with the structural properties of the films such as crystalline size, crystalline volume fraction, and hydrogen content. Furthermore, the PL emissions also showed correlation with the distribution of spherical grains with the size below 50 nm distributed on the films surface. © 2011 American Institute of Physics. | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | Conference Paper | |||||||||
| 権利 | ||||||||||
| 権利情報 | Copyright © American Institute of Physics | |||||||||
| 著者版フラグ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| 関連URI | ||||||||||
| 識別子タイプ | URI | |||||||||
| 関連識別子 | http://scitation.aip.org/content/aip/proceeding/aipcp | |||||||||
| 関連名称 | http://scitation.aip.org/content/aip/proceeding/aipcp | |||||||||
