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Effect of nitrogen gas on preparation of Ti-Al-N thin films by pulsed laser ablation
https://doi.org/10.24517/00007527
https://doi.org/10.24517/00007527d5b4ffa1-612c-446b-906b-b64e29f3409b
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-MORIMOTO-S-702.pdf (224.2 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
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| 公開日 | 2017-10-03 | |||||||||
| タイトル | ||||||||||
| タイトル | Effect of nitrogen gas on preparation of Ti-Al-N thin films by pulsed laser ablation | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| ID登録 | ||||||||||
| ID登録 | 10.24517/00007527 | |||||||||
| ID登録タイプ | JaLC | |||||||||
| 著者 |
Morimoto, Akiharu
× Morimoto, Akiharu× Shigeno, Hideki× Morita, Shinya× Yonezawa, Yasuto× Shimizu, Tatsuo |
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| 著者別表示 |
森本, 章治
× 森本, 章治
× 清水, 立生
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| 提供者所属 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報学系 / 金沢大学工学部 | |||||||||
| 書誌情報 |
Applied Surface Science 巻 127-129, p. 994-998, 発行日 1998-05-01 |
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| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0169-4332 | |||||||||
| DOI | ||||||||||
| 関連タイプ | isVersionOf | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | https://doi.org/10.1016/s0169-4332(97)00780-0 | |||||||||
| 出版者 | ||||||||||
| 出版者 | Elsevier | |||||||||
| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | The effect of ambient N2 gas on the preparation of Ti0.9Al0.1N (TAN) thin films for ferroelectric capacitors by pulsed laser ablation (PLA) using ArF and KrF excimer lasers was explored. The TAN films were prepared on (100)Si substrates heated at 620°C in various N2 pressures ranging from vacuum to 130 Pa. The TAN crystal growth was found to be influenced by the content of unintentionally incorporated O which was found to be controlled by the introduction of N2 gas into the deposition chamber. The O content for films prepared by KrF was found to be smaller than that for films prepared by ArF. This was due to the smaller optical absorption cross-section of KrF excimer laser for residual O2 or H2O molecules in the chamber and/or the higher deposition rate. The TAN film prepared by KrF excimer laser was found to be nearly epitaxial Si with a cube-on-cube crystallographic orientation. | |||||||||
| 著者版フラグ | ||||||||||
| 出版タイプ | AM | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||
