| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2017-10-03 |
| タイトル |
|
|
タイトル |
Charge trapping characteristics of Al2O3/Al-rich Al2O3/SiO2 stacked films fabricated by radio-frequency magnetron co-sputtering |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| ID登録 |
|
|
ID登録 |
10.24517/00008528 |
|
ID登録タイプ |
JaLC |
| 著者 |
Nakata, Shunji
Maeda, Ryoji
Kawae, Takeshi
Morimoto, Akiharu
Shimizu, Tatsuo
|
| 著者別表示 |
川江, 健
森本, 章治
清水, 立生
|
| 提供者所属 |
|
|
内容記述タイプ |
Other |
|
内容記述 |
金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系 |
| 書誌情報 |
Thin Solid Films
巻 520,
号 3,
p. 1091-1095,
発行日 2011-11-30
|
| ISSN |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0040-6090 |
| NCID |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA00863068 |
| DOI |
|
|
関連タイプ |
isVersionOf |
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1016/j.tsf.2011.08.011 |
| 出版者 |
|
|
出版者 |
Elsevier B.V. |
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
A thin-film structure comprising Al2O3/Al-rich Al2O3/SiO2 was fabricated on Si substrate. We used radio-frequency magnetron co-sputtering with Al metal plates set on an Al2O3 target to fabricate the Al-rich Al2O 3 thin film, which is used as a charge storage layer for nonvolatile Al2O3 memory. We investigated the charge trapping characteristics of the film. When the applied voltage between the gate and the substrate is increased, the hysteresis window of capacitance-voltage (C-V) characteristics becomes larger, which is caused by the charge trapping in the film. For a fabricated Al-O capacitor structure, we clarified experimentally that the maximum capacitance in the C-V hysteresis agrees well with the series capacitance of insulators and that the minimum capacitance agrees well with the series capacitance of the semiconductor depletion layer and stacked insulator. When the Al content in the Al-rich Al2O3 is increased, a large charge trap density is obtained. When the Al content in the Al-O is changed from 40 to 58%, the charge trap density increases from 0 to 18 × 1018 cm-3, which is 2.6 times larger than that of the trap memory using SiN as the charge storage layer. The device structure would be promising for low-cost nonvolatile memory. © 2011 Elsevier B.V. All rights reserved. |
| 著者版フラグ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連URI |
|
|
|
識別子タイプ |
URI |
|
|
関連識別子 |
http://www.elsevier.com/locate/issn/00406090 |
TE-PR-MORIMOTO-A-1091.pdf (423.2 kB)
.png)
