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Temperature dependence of ferroelectric properties and the activation energy of polarization reversal in (Pr,Mn)-codoped BiFeO3 thin films
https://doi.org/10.24517/00009236
https://doi.org/10.24517/00009236b511e454-18fa-4917-8440-4e34f31a5159
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-MORIMOTO-A-833.pdf (427.7 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
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| 公開日 | 2017-10-03 | |||||||||
| タイトル | ||||||||||
| タイトル | Temperature dependence of ferroelectric properties and the activation energy of polarization reversal in (Pr,Mn)-codoped BiFeO3 thin films | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| ID登録 | ||||||||||
| ID登録 | 10.24517/00009236 | |||||||||
| ID登録タイプ | JaLC | |||||||||
| 著者 |
Nomura, Yukihiro
× Nomura, Yukihiro× Tachi, Takashi× Kawae, Takeshi× Morimoto, Akiharu |
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| 著者別表示 |
川江, 健
× 川江, 健
× 森本, 章治
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| 提供者所属 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系 | |||||||||
| 書誌情報 |
Physica Status Solidi (B): Basic Research 巻 252, 号 4, p. 833-838, 発行日 2015-04-05 |
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| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0370-1972 | |||||||||
| NCID | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00773464 | |||||||||
| DOI | ||||||||||
| 関連タイプ | isVersionOf | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | 10.1002/pssb.201451553 | |||||||||
| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | We applied Vopsaroiu's model to (Bi,Pr)(Fe,Mn)O3 (BPFM) and Pb(Zr,Ti)O3 (PZT) ferroelectric thin films fabricated by chemical solution deposition. The temperature dependences of the saturation polarization and the coercive field were measured in a low-temperature region from 100 to 200K. The saturation polarizations of BPFM thin films decreased on decreasing the measurement temperature due to the polarization pinning effect, while that of PZT thin film was almost unchanged over the temperature region. The coercive fields of all the thin films were increased linearly on decreasing the measurement temperature. The activation energies for polarization reversal in as-grown BPFM, postannealed BPFM, and PZT thin films were 1.18, 1.25, and 0.95eV, respectively. These results indicate that BPFM thin films have large activation energies for polarization reversal compared with PZT thin films. In addition, the postannealed BPFM thin film has a larger activation energy than the as-grown BPFM thin film. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | |||||||||
| 著者版フラグ | ||||||||||
| 出版タイプ | AM | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||
