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Relaxation time broadening on emission spectrum of a Zn-doped p-type GaAs injection laser
http://hdl.handle.net/2297/7670
http://hdl.handle.net/2297/76702514ef2c-8f4e-4c1f-9eec-b2fcdfd670a5
名前 / ファイル | ライセンス | アクション |
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TE-PR-YAMADA-M-818.pdf (262.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-10-03 | |||||
タイトル | ||||||
タイトル | Relaxation time broadening on emission spectrum of a Zn-doped p-type GaAs injection laser | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Yamada, Minoru
× Yamada, Minoru× Tanaka, Akira× Moriya, Kiyoshi× Kado, Yuichi |
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提供者所属 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 金沢大学大学院自然科学研究科電子科学 | |||||
書誌情報 |
Applied Physics Letters 巻 43, 号 9, p. 818-820, 発行日 1983-11-01 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0003-6951 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1063/1.94520 | |||||
出版者 | ||||||
出版者 | American Institute of Physics | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Spontaneous emission and lasing gain profiles of semiconductor injection lasers which have Zn-doped GaAs active regions were experimentally determined, and the tailing phenomenon into the band gap of these profiles was theoretically explained as a result of relaxation time broadening due to scattering of electrons and holes. Especially, the tail of the gain profile was found to show a concave shape, which was better explained by the relaxation time broadening model than by the band tail state model. | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |