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Relaxation time broadening on emission spectrum of a Zn-doped p-type GaAs injection laser
http://hdl.handle.net/2297/7670
http://hdl.handle.net/2297/76702514ef2c-8f4e-4c1f-9eec-b2fcdfd670a5
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-YAMADA-M-818.pdf (262.3 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-10-03 | |||||
| タイトル | ||||||
| タイトル | Relaxation time broadening on emission spectrum of a Zn-doped p-type GaAs injection laser | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Yamada, Minoru
× Yamada, Minoru× Tanaka, Akira× Moriya, Kiyoshi× Kado, Yuichi |
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| 提供者所属 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 金沢大学大学院自然科学研究科電子科学 | |||||
| 書誌情報 |
Applied Physics Letters 巻 43, 号 9, p. 818-820, 発行日 1983-11-01 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00543431 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.94520 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Spontaneous emission and lasing gain profiles of semiconductor injection lasers which have Zn-doped GaAs active regions were experimentally determined, and the tailing phenomenon into the band gap of these profiles was theoretically explained as a result of relaxation time broadening due to scattering of electrons and holes. Especially, the tail of the gain profile was found to show a concave shape, which was better explained by the relaxation time broadening model than by the band tail state model. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
